화학공학소재연구정보센터
Thin Solid Films, Vol.338, No.1-2, 185-187, 1999
Indirect transitions in thin films due to the coulomb interactions between electrons
The absorption coefficient in the indirect transitions due to the Coulomb interactions between electrons in thin size-quantized semiconductor film has been calculated. The calculation has been carried out for the case of high density of electrons and small transfer of momentum (h) over bar (q) over right arrow, when the light absorption is connected with emission of plasmons. The frequency dependence as well as dependence on the concentration of conductivity electrons and thickness of the film has been obtained.