Binuclear complex Et2In(S2CNEt2). ZnEt(S2CNEt2) was prepared by the reaction of indium triethyl (InEt3) with zinc bis(diethyldithiocarbamate) (Zn(S2CNEt2)(2)). This complex was an excellent single-source precursor for low pressure MOCVD growth of spinel ZnIn2S4 thin layers. Optimal growth conditions for strongly [111] oriented spinel ZnIn2S4 thin film were as follows: substrate temperature T-sub, 400 degrees C; source temperature T-SO, 60 degrees C; carrier gas N-2; carrier flow rate R-flow (total pressure 1.3 kPa), 0.31/min. The spinel ZnIn2S4 thin film grown on an Si(111) substrate showed an n-type conduction nature and excellent semiconductor properties, such as optical bandgap energy (E-g)(opt), 2.72 eV, mobility mu, 25.4 cm(2)/Vs, and carrier concentration N, 3.7 x 10(16) cm(-3).