The surface micromorphology and growth rate of InSb layers grown by liquid phase electroepitaxy (LPEE) on B(111) surface of InSb substrate were studied. The mixing of In- and Bi-solutions was used to realize the kinetic regime of crystallization. The influence of solution mixing, growth temperatures and supersaturation are manifested in different micromorphology and growth mechanisms such as dislocation-controlled facet, or the layer and terrace-layer one. The conditions to improve the flatness of the layers are determined.