TiC films were deposited on stainless-steel substrates by the reactive radio-frequency magnetron sputtering technique, and N+ implantation were performed to enhance the quality of the TiC/stainless steel interface. The deposition rate of the TiC him increased linearly with increasing applied radio-frequency power, and it decreased with increasing partial-pressure ratio of the sputtering gas to the reactive gas. The stoichiometry of the TiC films and the interfacial depth profiles of the TiC/stainless steel heterostructures were investigated by Auger electron spectroscopy measurements. Removal of the oxygen at the TiC/stainless steel interface due to N+-implantation and annealing were observed. These results indicate that the N+-implanted TiC thin films grown on stainless-steel substrates can be used for advanced engineering ceramic applications.