The electronic densities of states of the bonding structures containing threefold and fourfold coordinated boron are studied. The bonding configurations with and without a B-H bond are considered. The threefold coordinated B configuration has a deep defect state in the gap. It is derived from the non-bonding p(z) state. There is no deep defect state induced by the fourfold coordinated B configuration. There is an empty band near the top of the valence band for the fourfold coordinated B that acts as hale-like carrier. A further study indicates that the bonding configurations with a B-H bond can give lower formation energy than those without a B-H bond.