We investigated the influence of electric fields on the growth of Si films deposited on quartz substrates. The electric field was applied in parallel to the plane of the substrate during the deposition of the Si films by e-beam evaporation. The applied voltage was 0 to 150 V between 3 mm; the deposition pressure was less than 5 x 10(-7) Pa: the substrate temperature T-s was 430-600 degrees C. It was found that the critical film thickness at which the film changed from the discontinuous to a continuous one was strongly dependent of the growth temperature and that its activation energy was 0.66 eV. However, the electric field less than or equal to 5 x 10(4) V/m hardly influenced the critical film thickness. RHEED measurements revealed that the patterns of the 100-nm-thick Si films without and with applied voltage were almost halo and clear rings, respectively at T-s = 600 degrees C. From this result, we can say that the electrical field enhances the crystallization of the Si him. Also, this enhancement effect occurred even for discontinuous films.