Wide bandgap emitters on crystalline substrates are an active area of research for use in heterojunction silicon solar cells. We have deposited high conductivity SIC containing large concentrations of beta-SiC crystallites. The effect of sample temperature and gas concentrations on the stoichiometry of the material has been investigated. Depending on process parameters, we find these films consist of varying concentrations of beta-SiC crystallites, amorphous silicon, amorphous silicon carbide alloys and C-C phases. The contribution of these material features to high and low conductivity in these films is assessed here. In order to facilitate this analysis we have used elastic recoil detection analysis (ERDA) and secondary ion mass spectrometry (SIMS) for atomic concentrations. Raman spectroscopy has been used for the detection of amorphous silicon, amorphous SiC and carbon based phases in the films. X-ray diffractometry has also been used to determine the crystallinity. The results from these techniques are correlated with film properties.