High temperature electronics is an advancing held aimed at the development of semiconductor devices designed to function reliably at temperatures in excess of 125 degrees C. Already conventional semiconductor materials like silicon or gallium arsenide are capable of operating to 300-400 degrees C using 'temperature hardening' modifications in design and associated materials such as metallisation schemes. Despite this progress a significant body of research has been focused towards the development of wide bandgap semiconductor materials. These are semiconductors with bandgaps larger than those of Si (1.1 eV) and GaAs (1.43 eV) and include silicon carbide (3C 2.39 eV, 6H 3.02 eV); the III-nitride (In-y, Al1-y)(x)Ga1-x N alloys (0 less than or equal to x, y less than or equal to 1) with band gaps ranging from 1.9-6.2 eV; and diamond (5.45 eV). The wider bandgap potentially offers higher operating temperatures before the thermally activated intrinsic carrier current causes latch up. This paper reviews the current status of wide bandgap semiconductor material growth and semiconductor doping. Examples of high temperature devices fabricated from these materials, their processing and electrical characteristics are discussed.