The selectivity of a LPCVD growth process for cubic silicon carbide with respect to the underlying substrate was investigated, and a highly selective growth process on structured Si/SiO2 substrates was found at temperatures above 1150 degrees C. The temperature dependence of this effect was systematically studied. In the temperature range between 1075-1150 degrees C, polycrystalline SiC was grown on SiO2 surfaces. At temperatures above 1150 degrees C, no growth on SiO2 occurred, whereas high-quality 3C-SiC layers were deposited onto the opened SiO2 mask areas. This was shown by REM pictures and by removal of the SiO2 layers in wet HF-etchant after the deposition. The selectively deposited 3C-SiC-structures were grown at a rate of 4.4 mu m/h.