We succeeded in preparing single phase NdNiO3 thin films with a thermally driven metal-insulator transition by RF sputtering and subsequent annealing under oxygen pressure. The films were strongly oriented and their electrical properties have been studied between 80 and 300 K. The influence of the substrate on the transport properties was studied. The films exhibit a metal-insulator transition around 160 K when the bulk shows a transition around 200 K.