With the r.f.-superimposed DC-magnetron sputtering process transparent and conducting indium-tin-oxide (ITO) films were deposited. The optical, electrical and structural properties of films deposited with different process parameters were investigated. It was shown that ITO-films sputtered with the r.f.-superimposed DC-magnetron gas discharge have resistivities that are much lower than the resistivities of ITO-films deposited with the common DC-gas discharge. This behaviour is due to a different crystal structure of ITO-films sputtered with a r.f.-assisted gas discharge. At a substrate temperature of 200 degrees C specific resistivities of less than 150 mu Omega cm were achieved for a gas discharge that was excited by 50% r.f.-power and 50% DC-power.