SrBi2Ta2O9 (SBT) thin films with Bi layered-perovskite structure were formed by chemical solution deposition method. The effects of preannealing on physical and electrical properties of SET thin films were investigated by employing rapid thermal annealing (RTA) and furnace annealing. SET thin films pre-annealed by furnace after each spin-coating exhibited better surface morphology and electrical properties than those pre-annealed by RTA. The crystallization mechanisms of SET thin films with pre-annealing by RTA and furnace were examined by Xray diffraction (XRD) analysis and scanning electron micrograph (SEM). Finally, the optimum condition of furnace pre-annealing (700 degrees C for 30 min) was found to give remanent polarization (2Pr) of about 20 mu C/cm(2), leakage current density of less than 10(-7) A/cm(2), and breakdown voltage of 15 V.