The effect of nitrogen incorporation on the electrical properties of diamond is currently under intense study. In this work, diamond grown by hot filament chemical vapor deposition was exposed to a radiofrequency (40 MHz glow discharge of pure nitrogen for times of between 5 min and 1 h. The effect of this exposure on the chemical and elemental composition of the samples was assessed by Raman and X-ray photoelectron spectroscopy. Changes in the electrical resistance with increasing film nitrogenation and temperature were measured. The scope and limitations of this approach to nitrogenation are evaluated.