An array of 2 x 2 inductively coupled plasma (ICP) sources has been built by modifying the conventional reactive ion etching (RIE) type LCD etcher. Each ICP has its own planar circular antenna and quartz dielectric window to the process chamber. One RF power supply and only one impedance matching network are used for delivering the power to all four ICP sources. Distribution of ion and electron densities and electron temperature are measured in terms of the number of acting ICP sources, chamber pressure and RF power. An uniform oxygen plasma density in the order of 10(15) m(-3) can be obtained at RF power of 600 W in process chamber of 620 x 620 mm(2) cross-section, which is higher than that of RIE plasma. By adjusting the power distribution among the four ICP units, uniformity of the plasma can be improved to 10% on substrate stage. Photoresist etching by the oxygen plasma is performed on 320 x 400 mm glass plates.