화학공학소재연구정보센터
Thin Solid Films, Vol.358, No.1-2, 12-15, 2000
Structural transition from CdTe to GdIn2Te4 in films grown by close paced vapor transport combined with free evaporation
In order to obtain CdIn2Te4 thin films, (CdTe)(1-x)(In2Te3)(x) thin films were grown on glass substrates by the close spaced vapor transport combined with free evaporation technique (CSVT-FE) using coevaporation of CdTe and In2Te3. When the saturation limit of In in the CdTe structure is achieved, a CdIn2Te4 thin film is obtained. Indium incorporation is controlled by the temperature of the In2Te3 source. The composition of the films was investigated by Anger electron spectroscopy and X-ray diffraction was used to evaluate the structural transition of the films from CdTe (zincblend) to CdIn2Te4 (tetragonal). Optical characterization by Raman, transmission and photoreflectance spectroscopies gave us further evidence of the success in the production of CdIn2Te4 thin films.