Cu(InGa)Se-2 thin films deposited on Mo coated soda-lime glass substrates by co-evaporation, were implanted with He+ and D+ (energies between 2.5 and 40 keV, doses from 10(14) to 3 x 10(15) cm(-2)) at room temperature. Implanted and non-implanted areas of the films were characterised using low temperature photoluminescence (PL). A single broad band (Al) at 1.1 eV dominated in the PL spectra from the nonimplanted material. Also a long, low energy and low intensity tail with a well-defined band (AZ) at 0.78 eV was detected, implantation of either He or D reduced the band Al intensity. Three high intensity low energy peaks IH1, IH2, and IH3 were observed in the PL spectra in both cases. One of the peaks (IH3) was detected at 0.78 eV. An increase in either dose or energy of implantation was found to increase the intensity of IH2 and IH3 normalised to that of Al. Similarities between the low energy bands observed after either He or D implantation suggests that all the three bauds have intrinsic origins. It is speculated that the implanted ions accumulate in small bubbles or diffuse to the surface and grain boundaries. The characteristics of bands A2 and IH3 suggest that the defects responsible fur the emission were present in the films before implantation. Lattice recovery processes leading to an overall reduction in the primary implant-related defect population could produce additional defects, which are associated with the low-energy PL peaks.