Ferroelectric PZT thin films on Pt/Ti/SiO2/Si(100) substrates with a thickness of 0.14 to 0.42 mum were prepared by sol-gel processing with one to seven spin coatings of a 0.4 M starting solution (Pb/Zr/Ti=1.1/0.52/0.48). After the fifth coating cycle, a dominant of the PZT (110) phase appeared, which was sufficient to achieve a proper intensity of perovskite PZT thin film. The relative dielectric constant (epsilon (r)) of the films increased as the number of coating cycles increased, while the dissipation factor hardly changed. The remnant polarization (P-r) also increased slightly, whereas the coercive field (E-c) significantly decreased. The electrical properties of the thin film coated five times (0.3 mum) were shown to be suitable for dielectric devices.