In the current study, we grew Pb-Ti-Nb-O (PTN) thin films on Pt/Ti/SiO2/Si substrate by metallorganic chemical vapor deposition (MOCVD) at temperatures ranging from 400 to 620 degreesC. The thin films obtained were examined by X-ray diffraction and cross-sectional transmission electron microscopy. It was revealed that both the PTN film and its interface with the underlying Pt layer were quite sensitive to variations in the deposition temperature. The considerable change in surface morphology of PTN thin films with an enhanced deposition temperature is discussed in relation to the surface hillocks formed on the Pt layer by aggregation of the out-diffused Pt atoms during MOCVD. (C) 2001 The Electrochemical Society.