The deep ultraviolet (DUV) photoresist systems are essential for phololithography to produce subquarter micrometer patterns in semiconductor fabrications. Such photoresist systems are not very stable when subjected to low energy ion bombardment during reactive ion etching (RIE) processes. The surface morphology of a DW photoresist changes in a RIE process leading to microfissures and this produces poor quality serrated images. Factors such as monomeric structure of the photoresist, postdevelop treatments, and plasma processing conditions affecting the stability of photoresist systems are investigated. (C) 2001 The Electrochemical Society. All rights reserved.