Top-seeded solution growth of bulk SiC has been accomplished in an argon atmosphere at 100-120 bar with the use of pure silicon melt solvent. Supersaturation in the growth system was shown to be dependent not only on temperature gradient but on the kinetics of the heterogeneous reaction between solid carbon and silicon melt as well. Thick epitaxial layers and boules 20-25 mm in diameter and up to 20 mm in length were grown using different container arrangements. Growth stability and material quality are discussed in context of growth conditions.