An overview of SiC crystal growth mainly for device application is given. Bulk growth including recent development is briefly reviewed. Epitaxial growth involving both heteroepitaxy and homoepitaxy is described. The concept of step-controlled epitaxy to obtain high-quality homoepitaxial layers is introduced, and the step bunching peculiar to this method is discussed. Doping characteristics during homoepitaxial growth is described. New techniques for production of SiC epitaxial layers are introduced. Finally, a future prospect in crystal growth is given.