Current results are presented for SiC epitaxial growths employing a 7x2 " SiC-VPE reactor. For growths on 2-inch SiC diameter substrates, the dopant concentration and layer thickness uniformity is typically +/-5% (standard deviation/mean). For the seven wafers within a run, the interwafer uniformity has been improved to approximately +/-7% for dopant concentration and +/-3% for layer thickness. Data will be presented which exhibit interrun (run-to-run) variation, for both thickness and doping, within +/-10% of the desired values. Also, preliminary results of investigations into higher growth rates (5.0 to 9.5 mum/hr) and thick epitaxial layers are presented.