SOL thinning effects on 3C-SiC on SOI

Planes N; Moller H; Camassel J; Stoemenos Y; Falkovski L; Eickhoff M; Krotz G

Materials Science Forum, Vol.338-3, 301-304, 2000

Planes N, Moller H, Camassel J, Stoemenos Y, Falkovski L, Eickhoff M, Krotz G

We have investigated the effect of reducing the SOL (Silicon Overlayer) thickness on the final structure of standard SOI (Silicon On Insulators) wafers. We show that the SOL morphology degrades when the SOL thickness decreases. This affects the growth of the 3C-SiC layers deposited on top.

Keywords:3C-SiC deposition;SOI;strain relaxation;thinning process