In the work, the surface/interface structures of Pd/SiC were investigated by angle resolved X-ray photoelectron spectroscopy (ARXPS) and atomic force microscopy (AFM) after consecutive annealing from 100 degreesC to 600 degreesC with 100 degreesC increments in air for 30 minutes. The thickness of the Pd ultra-thin film on SIC was about 30 Angstrom. The relative intensities of the Si(2p), C(1s), Pd(3d), and O(1s) core level XPS peaks from the Pd/SiC samples changed quite strongly with Various electron emission angles since the effective probing depth decreases with increasing emission angle. SiC became more chemical active due to the presence of Pd on the SiC surface. The Pd silicides were formed above 300 degreesC. SiCxOy Si, and Pd were found on the top of graphite and Pd silicides from 300 degreesC to 400 degreesC. With increasing temperatures, the concentration of the SiCxOy decreased and SiO2 was formed. At 500 degreesC and 600 degreesC, graphite was on the top of the film, and the Pd silicides and SiO2 were between the SiC substrate and the graphite. Oxygen is absorbed strongly on Pd surface at room and elevated temperatures. A surface/interfacial structural model for Pd/SiC at various elevated temperatures was suggested.