Very sharp spectra are obtained with low temperature photoluminescence of 4H and 6H SIC implanted with low doses of Erbium (3 x 10(15) cm(-3) to 1 x 10(17) cm(-3)) at energies up to 15 MeV. A new temperature dependence of the luminescence is found at low temperature and attributed to an excitation barrier between nitrogen donors and defect centers associated with the Erbium. DLTS measurements on dilutely implanted samples of 4H SiC suggest a deep Erbium center in n-type material but results for p-type material are unclear at present.