Photoluminescence is used to investigate the radiative lifetime in n-type 4H silicon carbide homoepitaxial films under pulsed excitation for three laser wavelengths: 266 nm, 337 nm, and 355 nm. The differences between the responses to these excitation sources are discussed in terms of surface recombination and temperature dependence. Integrated pulse photoluminescence spectra are measured. The observed spectral lines are assigned to phonon assisted free exciton recombination.