A non-contact ac photovoltage technique is reported for measuring capacitance and conductance of a buried junction in SiC. The photovoltage signal is generated by applying a chopped UV light source and is detected with a specially designed capacitive electrode. The values of junction capacitance and conductance are extracted from the real and the imaginary parts of the photovoltage. A new non-contact approach to perform C-V measurements of doping near the junction interface is suggested.