The most important device-related characteristic of a semiconductor crystal is its saturated drift velocity, which determines the frequency limits of semiconductor devices and consequently the range of their most efficient use. This remains true for the case of silicon carbide polytypes as well. At this time such velocities have been determined for two SiC polytypes (4H and 6H) for the direction perpendicular to the crystal c-axis [1]. As it was shown these values are equal. But there is anisotropy of electrical properties in silicon carbide polytypes for the direction along and perpendicular to the axis. The crystal axis is also the axis of the natural superlattice (NSL). It is well known that the drift velocities in artificial superlattices depend very strongly on parameters of the superlattice (SL), and change from 10(6) cm/s for a relatively wide [2] miniband to 10(4) cm/s for a narrow one [3]. In [4-6] it was shown that the NSL creates a miniband electron spectrum in silicon carbide polytypes that leads to the existence of such effects as Bloch oscillations, electrophonon resonances, interminiband tunnelling and others. The miniband structure should affect the values of the vertical saturated drift velocities, i.e., a correlation should be observed between the velocities and the parameters of the miniband spectrum of different polytypes. Until now, such data have not been published. Probably some experimental difficulties did not allow one to carry out such experiments. But many devices, including high power high frequency transistors, are being designed to operate in this geometry so that the determination of vertical saturated drift velocities is an important problem both from fundamental and applied points of view.