Charge carrier effective lifetimes in 4H-SiC power diode n-bases for wide temperature range -70 divided by +180 degreesC were estimated by reverse recovery charge measurements and parallel simulations. At room temperature lifetime values in the 50 divided by 60ns range were obtained. For lifetime temperature-dependence the power law behaviour tau similar toT(alpha) was confirmed with exponent values alpha approximate to2.0 divided by2.2.