Electron spin resonance (ESR) and scanning electron microscope (SEM) methods were used to investigate the delamination phenomena in silicon carbide. 3C-SiC substrate was implanted with a high dose H+. An ESR signal with a g = 2.0031 and a spin density of 6.1 x 10(15) spins/cm(2) was observed in the as-implanted layer. The g-value of this signal shifted to 2.0028 after annealing over 650 degreesC. Changes in g-value and signal intensity during annealing were caused by desorbtion of hydrogen during delamination. Another ESR measurement of a high dose H+ implanted Si was also performed to compare with the 3C-SiC.