We report a study of subsurface damage in 8 degrees off axis 4H-SiC wafers using Photon Backscattering (PBS) along with atomic force microscopy, transmission electron microscopy and micro-Raman spectroscopy. PBS is a non-distructive subsurface defect detection technique that has been used for evaluation of silicon and gallium arsenide wafers. We have used PBS to evaluate as-received wafers from various suppliers as well as chemomechanical polished wafers. PBS results are compared with TEM, AFM and micro-Raman. As received wafers all show signs of mechanical polishing induced scratches. Chemomechanical polished wafers are scratch free and do not show directional damage typical of mechanical polishing seen in PBS maps of as-received wafers.