The electrical properties of high concentration aluminum and nitrogen implanted layers have been investigated after furnace as well as flash lamp annealing. For Al doped layer the electrical efficiency is enhanced using flash lamp annealing. For highest Al concentrations the doped layer shows metal like conductivity. For N doped layers the flash lamp annealing effects no increase of the carrier concentration. Due to the short annealing time only the nitrogen on hexagonal sites is electrically active. Flash lamp annealing produced no extra damage of the vacancy type as proved by Positron Annihilation Spectroscopy.