We compare damage effects of "random" (off-axis) and [0001] aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below similar to 5x10(14) cm(-2), the integral damage is reduced by a factor of similar to2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.