Empirical formulae for range statistics of acceptor ions Al+ and B+ in the energy range 50 keV to 4 MeV were developed by fitting the data obtained from the analysis of secondary ion mass spectrometry (SIMS) depth profiles of single energy ion implants. Double implantation technology consisting of deep-range acceptor followed by shallow-range donor implantation was used to fabricate n-p junction diodes in 4H-SIC. Either Al or B was used as the acceptor species and N as the donor species with all implants performed at 700 degreesC and annealed at 1650 degreesC with an AIN encapsulant. The diodes were characterized for their current-voltage (I-V) and capacitance-voltage (C-V) behavior over the temperature range 25 degreesC to 400 degreesC.