We report the fabrication of high temperature ohmic contacts to n-type 4H- and 6H-SiC. Specific contact resistances (r(c)) were measured using the linear transmission line method (LTLM) on epitaxial layers with doping concentrations (N-D) between 9.8 x 10(16) cm(3) and 1.3 x 10(19) cm(-3) Average values of r(c) were 7.8 x 10(-3) Omega -cm(2) for a 6H-epilayer of doping concentration 9.8 x 10(16) cm(-3) and 6.9 x 10(-7) Omega -cm(2) for a 4H-epilayer of doping concentration 1.3 x 10(19) cm(-3). Extensive mixing at the Nb/SiC interface was not observed in Rutherford backscattering (RBS) spectra following anneals at 1100C for 10min or more, and the results of x-ray photoelectron spectroscopy (XPS) measurements indicated that niobium carbide was present in the Nb layer.