Structural and morphological characterization of Al/Ti-based contacts to p-type 4H-SiC was performed. Ohmic contacts with low specific contact resistance (similar to 10(-4)Omega .cm(2)) were obtained when cap layers have been used while were completely oxide-free when the annealing was performed under high vacuum conditions the contacts. It was found that use of Ti and Ni in the contact metallizations led to the formation of Ni2Si/TiC duplex coatings at high temperature annealing.