Capacitance-voltage measurements on p-type 6H-SiC with an HF-based electrolytic solution as Schottky barrier have been performed. The etching behaviour for the two surface polarities is different concerning the etched surface morphology. The doping concentration depth profile was accurately determined for etched depths up to 10 mum in the case of the Si-face. Moreover, this method is also useful for etch-pit observation following room temperature etching.