This paper reports on the fabrication of a MOS capacitor on n-type 4H-SiC utilizing 30nm of sacrificial Si evaporated onto the Si rich surface of the SIC epilayer sample under UHV conditions. The oxide was thermally grown on the sacrificial Si layer under a wet oxidising ambient with a re-oxidation anneal at 950 degreesC. The oxide was characterised using high frequency C-V measurement with illumination technique and compared to a control sample having no Si layer. The effective net oxide charge, Q(eff) was calculated to be 4.36 x 10(-11) cm(-2) and 7 x 10(-11) cm(-2) respectively.