An anisotropy of inversion channel mobility along [0001] and [1 (1) over bar 00] in the (11 (2) over bar0) face for 4H- and 6H-SiC MOSFETs was reported. A dramatic improvement of inversion channel mobility was successfully achieved especially in 4H-SiC by using the (11 (2) over bar0) face compared with the conventional (0001) Si-face. From the temperature dependence of channel mobility, phonon scattering is revealed as a dominant scattering mechanism of elections in MOSFETs on the (11 (2) over bar0) face.