High voltage Schottky-, Junction Barrier Schottky (JBS)- and PiN-diodes with an implanted JTE termination have been fabricated on the same 4H-SiC wafer. Blocking voltages of 2.5-2.8kV were reached for JBS and PiN diodes while the Schottky diodes reach about 2.0kV. It is shown that the JBS design increases the blocking voltage effectively compared to the Schottky device with less than 10% increase in on-state static lossses. Also, a comparison of static losses to a PIN diode gives a decrease of 40% for the JBS. The leakage current is also lowered by two decades compared to the Schottky device at its blocking voltage.