The new high voltage Junction Barrier controlled Schottky (JBS) diode has been fabricated using 4H-SiC. This diode has some field reduction regions in the active area of a Schottky barrier diode (SBD). These regions can reduce the electric field at the Schottky barrier in the reverse blocking state, and can reduce the leakage current. By adopting the proper SBD metal, fine patterning and optimized structures, we succeeded in improving the trade-off between the blocking voltage (BV) and the specific on-resistance, and realized the highest BV, an excellent low leakage current, and the top level of specific on-resistance. BV at the reverse leakage current density of 10mA/cm(2), leakage current density at 3kV, and specific on-resistance was 3.6kV, 2mA/cm(2), and 43m Omega cm(2) respectively.