Gold (Au) Schottky barrier contacts have been fabricated on p-type 3C-SiC films, which were epitaxially grown on Si substrates by low pressure chemical vapor deposition (LPCVD) method. The Schottky barrier height was experimentally obtained by current-voltage, capacitance-voltage and x-ray photoemission spectroscopy measurements to be 1.12 +/- 0.12 eV, 1.11 +/- 0.18 eV and 1.40 +/- 0.15 eV.