Planar 4H-SiC Accu-DMOSFETs have been designed, fabricated and characterized, and the highest reported current >1 Amp) for this type of device was achieved at both room temperature and 350 degreesC. The highest breakdown voltage obtained on a 1200 m Omega -cm(2) device was 904 V. The specific on-resistance obtained on another 439 V device was measured to be 90 m Omega -cm(2) and the accumulation layer mobility is estimated to be in the 5 to 8 cm(2)/V-sec range. The temperature variation of on-resistance, channel mobility and threshold voltage is also presented.