We investigate the static and dynamic characteristics of implanted anode high-voltage 4H-SiC pin junction rectifiers. The epitaxially grown drift layer has a thickness of 40 mum and a blocking voltage of 4.5 kV is measured with a leakage current of 1x10(-4) A/cm(2). An average forward drop of 4.7 V for 300 mum x 300 mum devices and 5.0 V for 800 mum x 800 mum devices is measured at 100 A/cm(2) and 25 degreesC. A minimum ideality factor of 1.2 is determined. Reverse recovery measurements indicate a high-level lifetime of at least 20 ns at room temperature and 90 ns at 250 degreesC.