This contribution will focus on recent progress in Merged-PN/Schottky-Diodes (MPS) or 'Junction Barrier Schottky-Diodes' (JBS) [2] based on 4H-SiC first published on the ICSCIII-N'97 [1] conference. We will present measurements on large area 600V-SiC-Schottky-diodes which are able to handle more than 50 A. The switching behavior of these SiC-diodes is drastically improved in comparison to Si-diodes. The IGBT turn-on characteristic at 50 A will be demonstrated with a single SiC-Schottky-diode chip as the free wheeling diode.