A novel Bipolar Transistor structure - the MOS-Gated Bipolar Transistor (MGT) is designed and studied for the first time on 4H-SiC. Simulations are performed and the device characteristics are compared with the Insulated-Gate Bipolar Transistor (IGBT). An on-state voltage drop similar to that of the IGBT is observed, but the new device exhibits superior Forward Bias Safe Operating Area (FBSOA) and Reverse Bias Safe Operating Area (RBSOA) when compared to IGBT. The turn-off MOSFET makes the turn-off much faster and independent of carrier lifetime.