Pendeoepitaxy of GaN on GaN grown on 6H-SiC (0001) substrates with a conductive buffer layer has been studied. Transmission electron microscopy (TEM) revealed a significant reduction in dislocations in PE epilayers. Some dislocations, which are parallel to (0001) plane, were observed in PE epilayers. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were also utilized to characterize the PE epilayers. InGaN quantum well LEDs have been fabricated with different indium compositions that emit from 450 to 625 nm.