In this paper, we report on the DC and targe-signal RF performance of recessed gate GaN MESFETs fabricated using the photoelectrochemical etching process. The fabricated GaN MESFET exhibits a current saturation at V-DS = 4 V and a pinch-off at V-GS = -3 V. The peak drain current of the device is about 230 mA/mm at 300 K and does not significantly change with temperature up to 500 K operation. The f(T) and f(max) from the device are 6.35 GHz and 10.25 GHz respectively. The experimental device characteristics were compared with the results obtained by the large-signal RF model utilizing the harmonic balance techniques. The simulated power added efficiency (PAE) was about 40 % at an operating frequency of 4 GHz.