The high-density microwave plasma utilizing a spokewise antenna was successfully applied to fast deposition of highly crystallized and photoconductive microcrystalline silicon (muc-Si:H) film at low temperatures. Among various deposition parameters, spatial distribution of ion energy (IDF) mainly determines him crystallinity. The best crystallinity was obtained at the axial distance, Z from the quartz glass plate, where the spread of mean ion energy is minimum. By optimizing the axial distance, Z and total pressure, highly crystallized and photoconductive muc-Si:H film could be fabricated with a high deposition rate of 47 Angstrom /s at similar to 50 mTorr in SiH4 and Ar plasma. (C) 2001 Elsevier Science B.V. All rights reserved.