For the first time, DC are-discharge ionplating was used to grow low-resistivity ZnO:Ga conducting-films at high deposition rate. Low-resistivity ZnO:Ga conducting films were grown at a rate of over 100 Angstrom /a by using DC are-discharge ionplating at a discharge current of 150 A. The resistivity of this film was about 2 x 10(-4) Omega cm. The lowest film resistivity, 1.6 x 10(-4) Omega cm, was obtained on an inexpensive soda lime glass substrate at 350 degreesC in which the Ga content was about 4at%. (C) 2001 Elsevier Science B.V. All rights reserved.